Specification	FDG410NZ

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.2 nC
Input Capacitance (Ciss) (Max) @ Vds	535 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	420 mW
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	SC-88 (SC-70-6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

FDG410NZ Series

N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
ON Semiconductor FDG410NZ	Surface Mount	-55 °C	150 °C	420 mW	535 pF	2.2 A	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	SC-88 (SC-70-6)	8 V	1.5 V 4.5 V	20 V	7.2 nC	N-Channel	70 mOhm	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDG410NZ Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on)and gate charge (Qg) in a small package.