FDG410NZ Series

N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ

Catalog

N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
ON Semiconductor FDG410NZ	Surface Mount	-55 °C	150 °C	420 mW	535 pF	2.2 A	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	SC-88 (SC-70-6)	8 V	1.5 V 4.5 V	20 V	7.2 nC	N-Channel	70 mOhm	1 V

Catalog

N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ

Key Features

• Max rDS(on)= 70 mΩ at VGS= 4.5 V, ID= 2.2 A

• Max rDS(on)= 77 mΩ at VGS= 2.5 V, ID= 2.0 A

• Max rDS(on)= 87 mΩ at VGS= 1.8 V, ID= 1.8 A

• Max rDS(on)= 115 mΩ at VGS= 1.5 V, ID= 1.5 A

• HBM ESD protection level > 2 kV (Note 3)

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• Fast switching speed

• Low gate charge

• RoHS compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on)and gate charge (Qg) in a small package.