Discrete Semiconductor Products

MCB60I1200TZ-TUB

Obsolete

LITTELFUSE

SICARBIDE-DISCRETE MOSFET TO-268AA/ TUBE

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Discrete Semiconductor Products

MCB60I1200TZ-TUB

Obsolete

LITTELFUSE

SICARBIDE-DISCRETE MOSFET TO-268AA/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MCB60I1200TZ-TUB

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	2790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Rds On (Max) @ Id, Vgs [Max]	34 mOhm
Supplier Device Package	TO-268AA (D3Pak-HV)
Vgs (Max) [Max]	20 V, -5 V
Vgs(th) (Max) @ Id	4 V

MCB60I1200TZ Series

SiCarbide-Discrete MOSFET TO-268AA

Part	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Mounting Type
LITTELFUSE MCB60I1200TZ-TUB	1.2 kV	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	175 °C	-40 °C	90 A	2790 pF	-5 V 20 V	160 nC	4 V	34 mOhm	TO-268AA (D3Pak-HV)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

Description

General part information

MCB60I1200TZ Series

Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions.

Documents

Technical documentation and resources

No documents available