Catalog
SiCarbide-Discrete MOSFET TO-268AA
Description
AI
Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions.
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SiCarbide-Discrete MOSFET TO-268AA
SiCarbide-Discrete MOSFET TO-268AA
| Part | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 LITTELFUSE | 1.2 kV | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | N-Channel | 175 °C | -40 °C | 90 A | 2790 pF | -5 V 20 V | 160 nC | 4 V | 34 mOhm | TO-268AA (D3Pak-HV) | Surface Mount |