Discrete Semiconductor Products

TPH3R008QM,LQ

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MOSFETS 80V UMOS9-H SOP-ADVANCE(N) 3MOHM

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Discrete Semiconductor Products

Active

MOSFETS 80V UMOS9-H SOP-ADVANCE(N) 3MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	TPH3R008QM,LQ

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7200 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3 W
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	8-SOP Advance (5x5.75)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Power Dissipation (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TPH3R008QM,LQ	71 nC	8-SOP Advance (5x5.75)	175 °C	7200 pF	8-PowerTDFN	6 V 10 V	MOSFET (Metal Oxide)	Surface Mount	3 W	180 W	3.5 V	80 V	N-Channel	20 V	3 mOhm	100 A

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General part information

MOSFETS 80V UMOS9-H SOP-ADVANCE(N) 3MOHM

Technical documentation and resources