UMOS9-H Series
Manufacturer: Toshiba Semiconductor and Storage
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MOSFETS 80V UMOS9-H SOP-ADVANCE(N) 3MOHM
| Part | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Power Dissipation (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 71 nC | 8-SOP Advance (5x5.75) | 175 °C | 7200 pF | 8-PowerTDFN | 6 V 10 V | MOSFET (Metal Oxide) | Surface Mount | 3 W | 180 W | 3.5 V | 80 V | N-Channel | 20 V | 3 mOhm | 100 A |