Discrete Semiconductor Products

SIR688DP-T1-GE3

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MOSFET N-CH 60V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 60V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR688DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	3105 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	83 W, 5.4 W
Rds On (Max) @ Id, Vgs [Max]	3.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIR688DP-T1-GE3	N-Channel	60 V	2.7 V	MOSFET (Metal Oxide)	3105 pF	3.5 mOhm	-55 °C	150 °C	20 V	5.4 W 83 W	PowerPAK® SO-8	66 nC	4.5 V 10 V	60 A	Surface Mount	PowerPAK® SO-8

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General part information

N-Channel 60 V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources