SIR688 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 60V 60A PPAK SO-8
| Part | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 60 V | 2.7 V | MOSFET (Metal Oxide) | 3105 pF | 3.5 mOhm | -55 °C | 150 °C | 20 V | 5.4 W 83 W | PowerPAK® SO-8 | 66 nC | 4.5 V 10 V | 60 A | Surface Mount | PowerPAK® SO-8 |