Discrete Semiconductor Products

RN1702JE(TE85L,F)

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TRANS 2NPN PREBIAS 0.1W ESV

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Discrete Semiconductor Products

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TRANS 2NPN PREBIAS 0.1W ESV

Technical Specifications

Parameters and characteristics for this part

Specification	RN1702JE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-553
Power - Max [Max]	100 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	ESV
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-353(USV)

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Power - Max [Max]	Transistor Type	Frequency - Transition	Resistor - Emitter Base (R2)	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN1702,LF	5-TSSOP SC-70-5 SOT-353	50	300 mV	500 nA	USV	200 mW	2 NPN - Pre-Biased (Dual)	250 MHz	10 kOhms	Surface Mount	50 V	100 mA
Toshiba Semiconductor and Storage RN1702JE(TE85L,F)	SOT-553	50	300 mV	100 nA	ESV	100 mW	2 NPN - Pre-Biased (Dual) (Emitter Coupled)	250 MHz	10 kOhms	Surface Mount	50 V	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-353(USV)

Technical documentation and resources