Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-353(USV)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-353(USV)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-353(USV)
| Part | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Power - Max [Max] | Transistor Type | Frequency - Transition | Resistor - Emitter Base (R2) | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 5-TSSOP SC-70-5 SOT-353 | 50 | 300 mV | 500 nA | USV | 200 mW | 2 NPN - Pre-Biased (Dual) | 250 MHz | 10 kOhms | Surface Mount | 50 V | 100 mA |
 Toshiba Semiconductor and Storage | SOT-553 | 50 | 300 mV | 100 nA | ESV | 100 mW | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 250 MHz | 10 kOhms | Surface Mount | 50 V | 100 mA |