Discrete Semiconductor Products
STGF10NB60SD
ActiveSTMicroelectronics
16 A, 600 V LOW DROP IGBT WITH SOFT AND FAST RECOVERY DIODE
Discrete Semiconductor Products
STGF10NB60SD
ActiveSTMicroelectronics
16 A, 600 V LOW DROP IGBT WITH SOFT AND FAST RECOVERY DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGF10NB60SD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 23 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 33 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 25 W |
| Reverse Recovery Time (trr) | 37 ns |
| Supplier Device Package | TO-220FP |
| Switching Energy | 5 mJ, 600 µJ |
| Td (on/off) @ 25°C | 1.2 µs, 700 ns |
| Test Condition | 1 kOhm, 480 V, 15 V, 10 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 1.75 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGF10NB60SD Series
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).