Discrete Semiconductor Products

CES520,L3F

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DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)

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Discrete Semiconductor Products

Active

DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)

Technical Specifications

Parameters and characteristics for this part

Specification	CES520,L3F

Capacitance @ Vr, F	17 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SC-79, SOD-523
Speed	200 mA
Speed	Any Speed
Supplier Device Package	ESC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	600 mV

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction	Package / Case	Current - Average Rectified (Io)	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Capacitance @ Vr, F	Technology	Operating Temperature - Junction [Max]
Toshiba Semiconductor and Storage CES520,H3F	5 µA	600 mV	Surface Mount	125 °C	SC-79 SOD-523	200 mA	200 mA	Any Speed	30 V	ESC	17 pF	Schottky
Toshiba Semiconductor and Storage CES520,L3F	5 µA	600 mV	Surface Mount		SC-79 SOD-523	200 mA	200 mA	Any Speed	30 V	ESC	17 pF	Schottky	125 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 200mA Surface Mount ESC

Technical documentation and resources