Discrete Semiconductor Products
CES520,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
CES520,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CES520,H3F |
|---|---|
| Capacitance @ Vr, F | 17 pF |
| Current - Average Rectified (Io) | 200 mA |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 125 °C |
| Package / Case | SC-79, SOD-523 |
| Speed | 200 mA |
| Speed | Any Speed |
| Supplier Device Package | ESC |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.03 | |
Description
General part information
CES520 Series
DIODES, 30 V/0.2 A SCHOTTKY BARRIER DIODE, SOD-523(ESC)
Documents
Technical documentation and resources
