Discrete Semiconductor Products

SI4310BDY-T1-E3

Obsolete

MOSFET 2N-CH 30V 7.5A 14SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 7.5A 14SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4310BDY-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.5 A, 9.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	2370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	14-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	1.14 W, 1.47 W
Rds On (Max) @ Id, Vgs	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	FET Feature	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Configuration	Package / Case [x]	Package / Case [y]	Package / Case
Vishay General Semiconductor - Diodes Division SI4310BDY-T1-E3	18 nC	1.14 W 1.47 W	30 V	-55 °C	150 °C	7.5 A 9.8 A	MOSFET (Metal Oxide)	Logic Level Gate	Surface Mount	3 V	2370 pF	11 mOhm	2 N-Channel (Dual)	0.154 in	3.9 mm	14-SOIC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 7.5A, 9.8A 1.14W, 1.47W Surface Mount 14-SOIC

Technical documentation and resources

No documents available