SI4310 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET 2N-CH 30V 7.5A 14SOIC
| Part | Gate Charge (Qg) (Max) @ Vgs | Power - Max | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | FET Feature | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Configuration | Package / Case [x] | Package / Case [y] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 18 nC | 1.14 W 1.47 W | 30 V | -55 °C | 150 °C | 7.5 A 9.8 A | MOSFET (Metal Oxide) | Logic Level Gate | Surface Mount | 3 V | 2370 pF | 11 mOhm | 2 N-Channel (Dual) | 0.154 in | 3.9 mm | 14-SOIC |