Discrete Semiconductor Products

RN2316,LF

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BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/10 KΩ, SOT-323(USM)

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/10 KΩ, SOT-323(USM)

Technical Specifications

Parameters and characteristics for this part

Specification	RN2316,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-323, SC-70
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Resistors Included	R1, R2
Supplier Device Package	SC-70
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Transistor Type	Resistor - Emitter Base (R2)	Resistors Included
Toshiba Semiconductor and Storage RN2316,LXHF	50 V	100 mW	Surface Mount	100 mA	4.7 kOhms	500 nA	300 mV	SC-70	200 MHz	50	SC-70 SOT-323	PNP - Pre-Biased	10 kOhms
Toshiba Semiconductor and Storage RN2316,LF	50 V	100 mW	Surface Mount	100 mA	4.7 kOhms	500 nA	300 mV	SC-70	200 MHz	50	SC-70 SOT-323	PNP - Pre-Biased	10 kOhms	R1 R2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

Technical documentation and resources