RN2316 Series
Manufacturer: Toshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/10 KΩ, SOT-323(USM)
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Mounting Type | Current - Collector (Ic) (Max) [Max] | Resistor - Base (R1) | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Transistor Type | Resistor - Emitter Base (R2) | Resistors Included |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 50 V | 100 mW | Surface Mount | 100 mA | 4.7 kOhms | 500 nA | 300 mV | SC-70 | 200 MHz | 50 | SC-70 SOT-323 | PNP - Pre-Biased | 10 kOhms | |
Toshiba Semiconductor and Storage | 50 V | 100 mW | Surface Mount | 100 mA | 4.7 kOhms | 500 nA | 300 mV | SC-70 | 200 MHz | 50 | SC-70 SOT-323 | PNP - Pre-Biased | 10 kOhms | R1 R2 |