Discrete Semiconductor Products

STBV45-AP

Obsolete

TRANS NPN 400V 0.75A TO92AP

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Discrete Semiconductor Products

Obsolete

TRANS NPN 400V 0.75A TO92AP

Technical Specifications

Parameters and characteristics for this part

Specification	STBV45-AP

Current - Collector (Ic) (Max) [Max]	750 mA
Current - Collector Cutoff (Max) [Max]	250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	950 mW
Supplier Device Package	TO-92AP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	Operating Temperature	Package / Case	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type
STMicroelectronics STBV45	150 °C	TO-226AA	TO-226-3 TO-92-3	400 V	950 mW	750 mA	TO-92-3	1.5 V	250 µA	5	Through Hole	NPN
STMicroelectronics STBV45-AP	150 °C		TO-226-3 TO-92-3 (TO-226AA) Formed Leads	400 V	950 mW	750 mA	TO-92AP	1.5 V	250 µA	5	Through Hole	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 750 mA 950 mW Through Hole TO-92AP

Technical documentation and resources