Zenode.ai Logo
Beta
STP3N150
Discrete Semiconductor Products

STP3N150

Active
STMicroelectronics

N-CHANNEL 1500 V, 6 OHM TYP., 2.5 A POWERMESH POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTN1378+15
STP3N150
Discrete Semiconductor Products

STP3N150

Active
STMicroelectronics

N-CHANNEL 1500 V, 6 OHM TYP., 2.5 A POWERMESH POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsTN1378+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP3N150
Current - Continuous Drain (Id) @ 25°C2.5 A
Drain to Source Voltage (Vdss)1500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]29.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]939 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]140 W
Rds On (Max) @ Id, Vgs9 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 808$ 5.22
NewarkEach 1$ 6.54
10$ 6.04
25$ 4.44
50$ 4.31
100$ 4.17
250$ 3.94
500$ 3.70

Description

General part information

STP3N150 Series

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.