Zenode.ai Logo
Beta
SOT883
Discrete Semiconductor Products

PMZ200UNEYL

Active
Nexperia USA Inc.

MOSFET N-CH 30V 1.4A DFN1006-3

Deep-Dive with AI

Search across all available documentation for this part.

SOT883
Discrete Semiconductor Products

PMZ200UNEYL

Active
Nexperia USA Inc.

MOSFET N-CH 30V 1.4A DFN1006-3

Technical Specifications

Parameters and characteristics for this part

SpecificationPMZ200UNEYL
Current - Continuous Drain (Id) @ 25°C1.4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)1.5 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2.7 nC
Input Capacitance (Ciss) (Max) @ Vds89 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-883, SC-101
Power Dissipation (Max)350 mW
Power Dissipation (Max)6.25 W
Rds On (Max) @ Id, Vgs250 mOhm
Supplier Device PackageSOT-883
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
2000$ 0.08
5000$ 0.07
Digi-Reel® 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
2000$ 0.08
5000$ 0.07
N/A 9119$ 0.44
Tape & Reel (TR) 10000$ 0.07
20000$ 0.06
30000$ 0.06
50000$ 0.05
70000$ 0.05
100000$ 0.05

Description

General part information

PMZ200UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.