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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Mounting Type | Power Dissipation (Max) | Power Dissipation (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Surface Mount | 350 mW | 6.25 W | N-Channel | 89 pF | 8 V | 950 mV | SC-101 SOT-883 | 30 V | 1.4 A | 150 °C | -55 °C | SOT-883 | 1.5 V 4.5 V | MOSFET (Metal Oxide) | 250 mOhm | 2.7 nC |