Discrete Semiconductor Products
RQ3E120BNTB
ActiveRohm Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 12 A, 30 V, 0.0066 OHM, 10 V, 2.5 V ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RQ3E120BNTB
ActiveRohm Semiconductor
MOSFET TRANSISTOR, N CHANNEL, 12 A, 30 V, 0.0066 OHM, 10 V, 2.5 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3E120BNTB |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) @ Id, Vgs | 9.3 mOhm |
| Supplier Device Package [custom] | 8-HSMT |
| Supplier Device Package [x] | 3.2 |
| Supplier Device Package [y] | 3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ3E120BN Series
High power package RQ3E120BN is middle power MOSFET for switching application.
Documents
Technical documentation and resources