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Nch 30V 21A Power MOSFET
Description
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High power package RQ3E120BN is middle power MOSFET for switching application.
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Nch 30V 21A Power MOSFET
Nch 30V 21A Power MOSFET
| Part | Supplier Device Package [x] | Supplier Device Package [custom] | Supplier Device Package [y] | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 3.2 | 8-HSMT | 3 | 8-PowerVDFN | 2.5 V | 12 A | 9.3 mOhm | 20 V | Surface Mount | N-Channel | 1500 pF | 150 °C | 2 W | 29 nC | MOSFET (Metal Oxide) | 4.5 V 10 V | 30 V |