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Three Tower
Discrete Semiconductor Products

MURTA60020R

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GeneSiC Semiconductor

DIODE MODULES SI S-FST RECOV H3TWR 200-600V600A 50P/35

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Three Tower
Discrete Semiconductor Products

MURTA60020R

Active
GeneSiC Semiconductor

DIODE MODULES SI S-FST RECOV H3TWR 200-600V600A 50P/35

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMURTA60020R
Current - Average Rectified (Io) (per Diode)300 A
Diode Configuration1 Pair Common Anode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
Reverse Recovery Time (trr)200 ns
Speed500 ns, 200 mA
Supplier Device PackageThree Tower
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If [Max]1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 48$ 156.89
N/A 0$ 164.90
20$ 131.92
MouserN/A 24$ 156.88

Description

General part information

MURTA600 Series

Diode Array 1 Pair Common Anode 200 V 300A Chassis Mount Three Tower

Documents

Technical documentation and resources