MURTA600 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 400V 300A 3TOWER
| Part | Speed | Supplier Device Package | Package / Case | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Speed [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 mA 500 ns | Three Tower | Three Tower | Chassis Mount | 1.5 V | 400 V | 220 ns | -55 °C | 150 °C | Standard | 300 A | 1 Pair Common Anode | |||
GeneSiC Semiconductor | 200 mA 500 ns | Three Tower | Three Tower | Chassis Mount | 1.5 V | 400 V | 220 ns | -55 °C | 150 °C | Standard | 300 A | 1 Pair Common Cathode | |||
GeneSiC Semiconductor | 200 mA 500 ns | Three Tower | Three Tower | Chassis Mount | 1.3 V | 200 V | 200 ns | -55 °C | 150 °C | Standard | 300 A | 1 Pair Common Anode | |||
GeneSiC Semiconductor | 200 mA 500 ns | Three Tower | Three Tower | Chassis Mount | 600 V | 280 ns | -55 °C | 150 °C | Standard | 300 A | 1 Pair Common Cathode | 1.7 V | |||
GeneSiC Semiconductor | 200 mA 500 ns | Three Tower | Three Tower | Chassis Mount | 1.3 V | 200 V | 200 ns | -55 °C | 150 °C | Standard | 300 A | 1 Pair Common Cathode | |||
GeneSiC Semiconductor | Three Tower | Three Tower | Chassis Mount | 1.2 kV | -55 °C | 150 °C | Standard | 300 A | 1 Pair Common Anode | 2.6 V | 25 µA | 200 mA 500 ns |