STGB20H65FB2
ActiveTRENCH GATE FIELD-STOP 650 V, 20 A HIGH SPEED HB2 SERIES IGBT IN A D2PAK PACKAGE
STGB20H65FB2
ActiveTRENCH GATE FIELD-STOP 650 V, 20 A HIGH SPEED HB2 SERIES IGBT IN A D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB20H65FB2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 56 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 147 W |
| Supplier Device Package | TO-263 (D2PAK) |
| Switching Energy | 265 µJ, 214 µJ |
| Td (on/off) @ 25°C [custom] | 78.8 ns |
| Td (on/off) @ 25°C [custom] | 16 ns |
| Test Condition | 20 A, 10 Ohm, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.61 | |
Description
General part information
STGB20H65FB2 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Documents
Technical documentation and resources