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STMicroelectronics-STPS20LCD80CG-TR Rectifiers Diode Schottky 80V 20A 3-Pin(2+Tab) D2PAK T/R
Discrete Semiconductor Products

STB11N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.43 OHM TYP., 9 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetDS8920+20
STMicroelectronics-STPS20LCD80CG-TR Rectifiers Diode Schottky 80V 20A 3-Pin(2+Tab) D2PAK T/R
Discrete Semiconductor Products

STB11N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.43 OHM TYP., 9 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheetDS8920+20

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB11N65M5
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds644 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)85 W
Rds On (Max) @ Id, Vgs480 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1000$ 0.96
2000$ 0.91
3000$ 0.90
DigikeyN/A 2716$ 2.68
NewarkEach (Supplied on Cut Tape) 1$ 3.56
10$ 2.48
25$ 2.28
50$ 2.07
100$ 1.87
250$ 1.74
500$ 1.61
1000$ 1.49

Description

General part information

STB11N65M5 Series

These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.