Discrete Semiconductor Products
BSH111BKR
ActiveNexperia USA Inc.
POWER MOSFET, N CHANNEL, 55 V, 210 MA, 2.3 OHM, SOT-23, SURFACE MOUNT
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Discrete Semiconductor Products
BSH111BKR
ActiveNexperia USA Inc.
POWER MOSFET, N CHANNEL, 55 V, 210 MA, 2.3 OHM, SOT-23, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSH111BKR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 210 mA |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 30 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 302 mW |
| Rds On (Max) @ Id, Vgs [Max] | 4 Ohm |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.28 | |
Description
General part information
BSH111BK Series
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources