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55 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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55 V, N-channel Trench MOSFET
55 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Supplier Device Package | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.3 V | 4 Ohm | SC-59 SOT-23-3 TO-236-3 | 55 V | Surface Mount | 10 V | MOSFET (Metal Oxide) | 210 mA | 302 mW | TO-236AB | N-Channel | 150 °C | -55 °C | 30 pF | 4.5 V | 0.5 nC |