Discrete Semiconductor Products

PMZ600UNEZ

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TRANSISTOR MOSFET N-CH 20V 600MA 3-PIN DFN1006 T/R

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Search across all available documentation for this part.

DocumentsLFPAK MOSFET thermal design guide, Chinese version plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body +13

Discrete Semiconductor Products

PMZ600UNEZ

Active

Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 20V 600MA 3-PIN DFN1006 T/R

Deep-Dive with AI

DocumentsLFPAK MOSFET thermal design guide, Chinese version plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ600UNEZ

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	21.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	2.7 W
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs	620 mOhm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	950 mV

PMZ600UNE Series

20 V, N-channel Trench MOSFET

Part	Supplier Device Package	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max) [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
Nexperia USA Inc. PMZ600UNEZ	SOT-883	MOSFET (Metal Oxide)	150 °C	-55 °C	SC-101 SOT-883	0.7 nC	1.2 V	4.5 V	20 V	600 mA	950 mV	Surface Mount	620 mOhm	N-Channel	8 V	2.7 W	360 mW	21.3 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	22839	$ 0.27

Description

General part information

PMZ600UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.