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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SOT-883 | MOSFET (Metal Oxide) | 150 °C | -55 °C | SC-101 SOT-883 | 0.7 nC | 1.2 V | 4.5 V | 20 V | 600 mA | 950 mV | Surface Mount | 620 mOhm | N-Channel | 8 V | 2.7 W | 360 mW | 21.3 pF |