Specification	PMV88ENEAR

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	196 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	615 mW, 7.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	117 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

PMV88ENEA Series

60 V, N-channel Trench MOSFET

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Grade	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Qualification
Nexperia USA Inc. PMV88ENEAR	TO-236AB	175 °C	-55 °C	60 V	Automotive	2.7 V	Surface Mount	6 nC	20 V	117 mOhm	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	N-Channel	196 pF	4.5 V 10 V	7.5 W 615 mW	2.2 A	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	66	$ 0.60

Description

General part information

PMV88ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.