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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Grade | Vgs(th) (Max) @ Id | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | TO-236AB | 175 °C | -55 °C | 60 V | Automotive | 2.7 V | Surface Mount | 6 nC | 20 V | 117 mOhm | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | N-Channel | 196 pF | 4.5 V 10 V | 7.5 W 615 mW | 2.2 A | AEC-Q101 |