Discrete Semiconductor Products

G3R75MT12J-TR

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SIC MOSFETS 1200V 75MOHM TO-263-7 G3R SIC MOSFET

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Discrete Semiconductor Products

Active

SIC MOSFETS 1200V 75MOHM TO-263-7 G3R SIC MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	G3R75MT12J-TR

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	47 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1545 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	196 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	TO-263-7
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.7 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
GeneSiC Semiconductor G3R160MT12J-TR	2.7 V	Surface Mount	724 pF	N-Channel	19 A	1.2 kV	110 W	TO-263-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	23 nC	175 °C	-55 °C	180 mOhm	22 V	-10 V	15 V 18 V
GeneSiC Semiconductor G3R75MT12J-TR	2.7 V	Surface Mount		N-Channel	38 A	1.2 kV	196 W	TO-263-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA		175 °C	-55 °C	85 mOhm	22 V	-10 V	15 V 18 V	1545 pF	47 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5201	$ 11.03
Mouser	N/A	800	$ 8.08

General part information

SIC MOSFETS 1200V 75MOHM TO-263-7 G3R SIC MOSFET

Technical documentation and resources