G3R Series
Manufacturer: GeneSiC Semiconductor
SIC MOSFETS 1200V 160MOHM TO-263-7 G3R SIC MOSFET
| Part | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Vgs (Max) [Min] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 2.7 V | Surface Mount | 724 pF | N-Channel | 19 A | 1.2 kV | 110 W | TO-263-7 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 23 nC | 175 °C | -55 °C | 180 mOhm | 22 V | -10 V | 15 V 18 V | ||
GeneSiC Semiconductor | 2.7 V | Surface Mount | N-Channel | 38 A | 1.2 kV | 196 W | TO-263-7 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 175 °C | -55 °C | 85 mOhm | 22 V | -10 V | 15 V 18 V | 1545 pF | 47 nC |