Specification	PMV13XNR

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.9 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	6.9 W
Power Dissipation (Max)	600 mW
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

PMV13XN Series

30 V, N-channel Trench MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Mounting Type	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	Power Dissipation (Max)
Nexperia USA Inc. PMV13XNR	7 A	9.9 nC	30 V	TO-236AB	150 °C	-55 °C	900 mV	16 mOhm	770 pF	N-Channel	SC-59 SOT-23-3 TO-236-3	Surface Mount	MOSFET (Metal Oxide)	12 V	1.8 V	4.5 V	6.9 W	600 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.77

Description

General part information

PMV13XN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.