Catalog
30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Package / Case | Mounting Type | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 7 A | 9.9 nC | 30 V | TO-236AB | 150 °C | -55 °C | 900 mV | 16 mOhm | 770 pF | N-Channel | SC-59 SOT-23-3 TO-236-3 | Surface Mount | MOSFET (Metal Oxide) | 12 V | 1.8 V | 4.5 V | 6.9 W | 600 mW |