Discrete Semiconductor Products
PMPB33XP,115
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 20V 5.5A 6-PIN DFN-MD EP T/R
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Discrete Semiconductor Products
PMPB33XP,115
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 20V 5.5A 6-PIN DFN-MD EP T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMPB33XP,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1575 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 12.5 W, 1.7 W |
| Rds On (Max) @ Id, Vgs [Max] | 37 mOhm |
| Supplier Device Package | DFN2020MD-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PMPB33XP Series
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources