20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Mounting Type | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | P-Channel | 1.8 V | 4.5 V | DFN2020MD-6 | Surface Mount | MOSFET (Metal Oxide) | 900 mV | 1575 pF | 150 °C | -55 °C | 20 V | 37 mOhm | 23 nC | 1.7 W 12.5 W | 6-UDFN Exposed Pad | 5.5 A | 12 V |