Discrete Semiconductor Products

BUK7Y13-40B,115

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N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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Documentsplastic, single-ended surface-mounted package; 4 terminals LFPAK MOSFET thermal design guide, Chinese version +18

Discrete Semiconductor Products

BUK7Y13-40B,115

Active

Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

Deep-Dive with AI

Documentsplastic, single-ended surface-mounted package; 4 terminals LFPAK MOSFET thermal design guide, Chinese version +18

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y13-40B,115

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1311 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	85 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

BUK7Y13-40B Series

N-channel TrenchMOS standard level FET

Part	Drain to Source Voltage (Vdss)	Mounting Type	Grade	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Qualification	FET Type	Technology
Nexperia USA Inc. BUK7Y13-40B,115	40 V	Surface Mount	Automotive	20 V	10 V	58 A	175 °C	-55 °C	1311 pF	LFPAK56 Power-SO8	19 nC	SC-100 SOT-669	13 mOhm	85 W	AEC-Q101	N-Channel	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3270	$ 1.85

Description

General part information

BUK7Y13-40B Series

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.