BUK7Y13-40B Series

N-channel TrenchMOS standard level FET

Catalog

N-channel TrenchMOS standard level FET

Part	Drain to Source Voltage (Vdss)	Mounting Type	Grade	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Qualification	FET Type	Technology
Nexperia USA Inc. BUK7Y13-40B,115	40 V	Surface Mount	Automotive	20 V	10 V	58 A	175 °C	-55 °C	1311 pF	LFPAK56 Power-SO8	19 nC	SC-100 SOT-669	13 mOhm	85 W	AEC-Q101	N-Channel	MOSFET (Metal Oxide)

Catalog

N-channel TrenchMOS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.