Discrete Semiconductor Products

IPI65R110CFDXKSA1

Obsolete

INFINEON

MOSFET N-CH 650V 31.2A TO262-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IPI65R110CFDXKSA1

Obsolete

INFINEON

MOSFET N-CH 650V 31.2A TO262-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPI65R110CFDXKSA1

Current - Continuous Drain (Id) @ 25°C	31.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	277.8 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPI65R Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
INFINEON IPI65R280E6XKSA1	950 pF	45 nC	150 °C	-55 °C	650 V	Through Hole	3.5 V	MOSFET (Metal Oxide)	13.8 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	280 mOhm	N-Channel	104 W	20 V
INFINEON IPI65R110CFDXKSA1			150 °C	-55 °C	650 V	Through Hole	4.5 V	MOSFET (Metal Oxide)	31.2 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	110 mOhm	N-Channel	277.8 W	20 V	118 nC	PG-TO262-3	3240 pF
INFINEON IPI65R660CFDXKSA1			150 °C	-55 °C	650 V	Through Hole	4.5 V	MOSFET (Metal Oxide)	6 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	660 mOhm	N-Channel		20 V	22 nC	PG-TO262-3	615 pF	62.5 W
INFINEON IPI65R310CFDXKSA1		41 nC	150 °C	-55 °C	650 V	Through Hole	4.5 V	MOSFET (Metal Oxide)	11.4 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	310 mOhm	N-Channel		20 V		PG-TO262-3	1100 pF	104.2 W
INFINEON IPI65R280C6XKSA1	950 pF	45 nC	150 °C	-55 °C	650 V	Through Hole	3.5 V	MOSFET (Metal Oxide)	13.8 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	280 mOhm	N-Channel	104 W	20 V		PG-TO262-3
INFINEON IPI65R150CFDXKSA1	2340 pF		150 °C	-55 °C	650 V	Through Hole	4.5 V	MOSFET (Metal Oxide)	22.4 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	150 mOhm	N-Channel	195.3 W	20 V	86 nC
INFINEON IPI65R600C6XKSA1	440 pF	23 nC	150 °C	-55 °C	650 V	Through Hole	3.5 V	MOSFET (Metal Oxide)	7.3 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	600 mOhm	N-Channel	63 W	20 V		PG-TO262-3
INFINEON IPI65R099C6XKSA1		127 nC	150 °C	-55 °C	650 V	Through Hole	3.5 V	MOSFET (Metal Oxide)	38 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	99 mOhm	N-Channel		20 V			2780 pF	278 W
INFINEON IPI65R420CFDXKSA1	870 pF		150 °C	-55 °C	650 V	Through Hole	4.5 V	MOSFET (Metal Oxide)	8.7 A	I2PAK TO-262-3 Long Leads TO-262AA	10 V	420 mOhm	N-Channel	83.3 W	20 V	32 nC	PG-TO262-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IPI65R Series

N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO262-3

Documents

Technical documentation and resources