IPI65R Series
Manufacturer: INFINEON
MOSFET N-CH 650V 13.8A TO262-3
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Mounting Type | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 950 pF | 45 nC | 150 °C | -55 °C | 650 V | Through Hole | 3.5 V | MOSFET (Metal Oxide) | 13.8 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 280 mOhm | N-Channel | 104 W | 20 V | ||||
INFINEON | 150 °C | -55 °C | 650 V | Through Hole | 4.5 V | MOSFET (Metal Oxide) | 31.2 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 110 mOhm | N-Channel | 277.8 W | 20 V | 118 nC | PG-TO262-3 | 3240 pF | |||
INFINEON | 150 °C | -55 °C | 650 V | Through Hole | 4.5 V | MOSFET (Metal Oxide) | 6 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 660 mOhm | N-Channel | 20 V | 22 nC | PG-TO262-3 | 615 pF | 62.5 W | |||
INFINEON | 41 nC | 150 °C | -55 °C | 650 V | Through Hole | 4.5 V | MOSFET (Metal Oxide) | 11.4 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 310 mOhm | N-Channel | 20 V | PG-TO262-3 | 1100 pF | 104.2 W | |||
INFINEON | 950 pF | 45 nC | 150 °C | -55 °C | 650 V | Through Hole | 3.5 V | MOSFET (Metal Oxide) | 13.8 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 280 mOhm | N-Channel | 104 W | 20 V | PG-TO262-3 | |||
INFINEON | 2340 pF | 150 °C | -55 °C | 650 V | Through Hole | 4.5 V | MOSFET (Metal Oxide) | 22.4 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 150 mOhm | N-Channel | 195.3 W | 20 V | 86 nC | ||||
INFINEON | 440 pF | 23 nC | 150 °C | -55 °C | 650 V | Through Hole | 3.5 V | MOSFET (Metal Oxide) | 7.3 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 600 mOhm | N-Channel | 63 W | 20 V | PG-TO262-3 | |||
INFINEON | 127 nC | 150 °C | -55 °C | 650 V | Through Hole | 3.5 V | MOSFET (Metal Oxide) | 38 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 99 mOhm | N-Channel | 20 V | 2780 pF | 278 W | ||||
INFINEON | 870 pF | 150 °C | -55 °C | 650 V | Through Hole | 4.5 V | MOSFET (Metal Oxide) | 8.7 A | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 420 mOhm | N-Channel | 83.3 W | 20 V | 32 nC | PG-TO262-3 |