Deep-Dive with AI
Search across all available documentation for this part.
Technical Specifications
Parameters and characteristics for this part
| Specification | PMV30XPAR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1039 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 8.3 W |
| Power Dissipation (Max) | 610 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 33 mOhm |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 10792 | $ 0.70 | |
Description
General part information
PMV30XPA Series
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources