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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Qualification | Grade | Technology | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.3 V | Surface Mount | TO-236AB | 16 nC | P-Channel | 4.9 A | 20 V | AEC-Q101 | Automotive | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 175 °C | -55 °C | 12 V | 1039 pF | 33 mOhm | 8.3 W | 610 mW | 2.5 V 8 V |