Discrete Semiconductor Products

SIHU5N50D-E3

LTB

MOSFET N-CH 500V 5.3A TO251AA

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 5.3A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	SIHU5N50D-E3

Current - Continuous Drain (Id) (Tc)	5.3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	325 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	TO-251AA
Power Dissipation (Max)	104 W
Rds On (Max)	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Technology	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	FET Type
Vishay Dale SIHU5N50D-GE3	10 V	5 V	5.3 A	325 pF	MOSFET (Metal Oxide)	20 nC	104 W	1.5 Ohm	TO-251AA	-55 °C	150 °C	500 V	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	30 V	N-Channel
Vishay Dale SIHU5N50D-E3	10 V	5 V	5.3 A	325 pF	MOSFET (Metal Oxide)	20 nC	104 W	1.5 Ohm	TO-251AA	-55 °C	150 °C	500 V	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	30 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.48	1m+
	Tube	3000	$ 0.49	1m+

3D models and CAD resources for this part

General part information

N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-251AA

Technical documentation and resources