SIHU5 Series

Catalog

MOSFET N-CH 500V 5.3A TO251

Part	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type
Vishay General Semiconductor - Diodes Division SIHU5N50D-GE3	TO-251AA	104 W	20 nC	Through Hole	325 pF	5 V	10 V	MOSFET (Metal Oxide)	1.5 Ohm	500 V	IPAK TO-251-3 Short Leads TO-251AA	5.3 A	-55 °C	150 °C	30 V	N-Channel
Vishay General Semiconductor - Diodes Division SIHU5N50D-E3	TO-251AA	104 W	20 nC	Through Hole	325 pF	5 V	10 V	MOSFET (Metal Oxide)	1.5 Ohm	500 V	IPAK TO-251-3 Short Leads TO-251AA	5.3 A	-55 °C	150 °C	30 V	N-Channel