Discrete Semiconductor Products

GHXS050B120S-D3

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DIODE MODULES SIC SBD 1200V 50A SIC POWER MODULES

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Discrete Semiconductor Products

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DIODE MODULES SIC SBD 1200V 50A SIC POWER MODULES

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS050B120S-D3

Current - Average Rectified (Io) (per Diode)	101 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io) (per Diode)	Diode Configuration
SemiQ GHXS050B120S-D3	SOT-227-4 miniBLOC	100 µA	SOT-227	1.7 V	SiC (Silicon Carbide) Schottky	0 ns	175 ░C	-55 °C	Chassis Mount	1.2 kV	500 mA	101 A	2 Independent

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General part information

DIODE MODULES SIC SBD 1200V 50A SIC POWER MODULES

Technical documentation and resources