Discrete Semiconductor Products

GHXS050B120S-D3

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DIODE MODULES SIC SBD 1200V 50A SIC POWER MODULES

Discrete Semiconductor Products

Active

DIODE MODULES SIC SBD 1200V 50A SIC POWER MODULES

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS050B120S-D3

Current - Average Rectified (Io) (per Diode)	101 A
Current - Reverse Leakage	100 µA
Diode Configuration	Independent
Diode Count	2
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.7 V

Part	Package / Case	Current - Reverse Leakage	Package Name	Voltage - Forward (Vf) (Max)	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Current - Average Rectified (Io) (per Diode)	Diode Count	Diode Configuration
SemiQ GHXS050B120S-D3	miniBLOC SOT-227-4	100 µA	SOT-227	1.7 V	SiC (Silicon Carbide) Schottky	0 ns	175 °C	-55 °C	Chassis Mount	1200 V	500 mA	No Recovery Time	500 mA 500 mA	101 A	2	Independent

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tube	1	$ 33.28	<4d
		10	$ 24.49
		100	$ 20.24
Mouser	N/A	1	$ 31.69	<5d
		10	$ 23.32
		100	$ 20.23

3D models and CAD resources for this part

General part information

DIODE MODULES SIC SBD 1200V 50A SIC POWER MODULES

Technical documentation and resources