Specification	PMDT290UNE,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.68 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	83 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	500 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	SOT-666
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

PMDT290UNE Series

20 V, 800 mA dual N-channel Trench MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Technology	FET Feature	Power - Max [Max]	Grade	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Nexperia USA Inc. PMDT290UNE,115	0.68 nC	800 mA	2 N-Channel (Dual)	AEC-Q101	150 °C	-55 °C	MOSFET (Metal Oxide)	Logic Level Gate	500 mW	Automotive	380 mOhm	Surface Mount	SOT-563 SOT-666	83 pF	SOT-666	20 V	950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.61

Description

General part information

PMDT290UNE Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.