20 V, 800 mA dual N-channel Trench MOSFET
20 V, 800 mA dual N-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Configuration | Qualification | Operating Temperature [Max] | Operating Temperature [Min] | Technology | FET Feature | Power - Max [Max] | Grade | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 0.68 nC | 800 mA | 2 N-Channel (Dual) | AEC-Q101 | 150 °C | -55 °C | MOSFET (Metal Oxide) | Logic Level Gate | 500 mW | Automotive | 380 mOhm | Surface Mount | SOT-563 SOT-666 | 83 pF | SOT-666 | 20 V | 950 mV |